| PART |
Description |
Maker |
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| CY14B104LA |
4-Mbit (512 K X 8/256 K X 16) nvSRAM
|
Cypress Semiconductor
|
| CY7C1362C-166AJXC CY7C1360C-166AJXC CY7C1360C-166A |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM
|
Cypress Semiconductor
|
| CY7C1361C-133AJXCT |
9-Mbit (256 K 36/512 K 18) Flow-Through SRAM
|
Cypress
|
| AM41LV3204M M410000095 M410000096 AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
| CY7C1367C-166AXC |
9-Mbit (256 K × 36/512 K × 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1355C-133AXC |
9-Mbit (256 K × 36 / 512 K × 18) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| M29W400DB55N1 M29W400DB55N1E M29W400DB55N1F M29W40 |
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory
|
STMicroelectronics
|
| CY14B104K-ZS45XI CY14B104K-ZS25XI CY14B104K-ZS25XI |
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times
|
Cypress Semiconductor
|
| AM29F400BB-55FEB AM29F400BB-55FIB AM29F400BT-55FCB |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
http://
|
